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硫化鎵晶體 GaS(Gallium Sulfide)
晶體尺寸：~10毫米
電學性能：半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14
Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191
